![Micromachines | Free Full-Text | Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE) Micromachines | Free Full-Text | Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE)](https://www.mdpi.com/micromachines/micromachines-12-00542/article_deploy/html/images/micromachines-12-00542-g002-550.jpg)
Micromachines | Free Full-Text | Reduced Etch Lag and High Aspect Ratios by Deep Reactive Ion Etching (DRIE)
Inverse-designed single-step-etched colorless 3 dB couplers based on RIE-lag-insensitive PhC-like subwavelength structures
![Slope formation using DRIE together with RIE lag. a) Mask design and... | Download Scientific Diagram Slope formation using DRIE together with RIE lag. a) Mask design and... | Download Scientific Diagram](https://www.researchgate.net/publication/264578988/figure/fig3/AS:392444333051910@1470577428433/Slope-formation-using-DRIE-together-with-RIE-lag-a-Mask-design-and-photo-lithography.png)
Slope formation using DRIE together with RIE lag. a) Mask design and... | Download Scientific Diagram
Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas: Applied Physics Letters: Vol 68, No 1
![Aspect ratio dependent etching lag reduction in deep silicon etch processes: Journal of Vacuum Science & Technology A: Vol 24, No 4 Aspect ratio dependent etching lag reduction in deep silicon etch processes: Journal of Vacuum Science & Technology A: Vol 24, No 4](https://avs.scitation.org/action/showOpenGraphArticleImage?doi=10.1116/1.2172944&id=images/medium/1.2172944.figures.f5.gif)
Aspect ratio dependent etching lag reduction in deep silicon etch processes: Journal of Vacuum Science & Technology A: Vol 24, No 4
![Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25nm silicon nanoimprint templates: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25nm silicon nanoimprint templates: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and](https://avs.scitation.org/action/showOpenGraphArticleImage?doi=10.1116/1.2050669&id=images/medium/1.2050669.figures.f3.gif)
Profile evolution of Cr masked features undergoing HBr-inductively coupled plasma etching for use in 25nm silicon nanoimprint templates: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and
![Schematic representations of the RIE lag-based process flows reported... | Download Scientific Diagram Schematic representations of the RIE lag-based process flows reported... | Download Scientific Diagram](https://www.researchgate.net/publication/253803987/figure/fig2/AS:325014969700411@1454501015810/Schematic-representations-of-the-RIE-lag-based-process-flows-reported-by-a-Bourouina.png)
Schematic representations of the RIE lag-based process flows reported... | Download Scientific Diagram
![Slope formation using DRIE together with RIE lag. a) Mask design and... | Download Scientific Diagram Slope formation using DRIE together with RIE lag. a) Mask design and... | Download Scientific Diagram](https://www.researchgate.net/profile/Alexander-Smits/publication/264578988/figure/fig1/AS:392444333051904@1470577428099/Slope-formation-using-DRIE-together-with-RIE-lag-a-Mask-design-and-photo-lithography_Q320.jpg)